A high-voltage light-activated thyristor with a novel over-voltage self-protection structure

Author

Shimizu, Yoshiteru ; Iyotani, Ryuji ; Konishi, Nobutake ; Yatsuo, Tsutomu

Author_Institution

Hitachi Ltd., Ibaraki, Japan

Volume

36

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

1001

Lastpage

1004

Abstract

A high-voltage self-protected thyristor with a well structure formed in its p-base layer whose operation is based on avalanche breakdown is described. The device structure is simple and easy to fabricate compared to other avalanche-type devices. Numerical analyses and experiments demonstrate that the breakover voltage can be controlled by varying the well diameter and/or its depth. The breakdown voltage fluctuation of the device is 10% when the junction temperature is varied from 23 to 100°C. The device is turned on safely at 7300 V

Keywords

impact ionisation; overvoltage protection; thyristors; 23 to 100 degC; avalanche breakdown; breakdown voltage fluctuation; breakover voltage; high-voltage light-activated thyristor; junction temperature; numerical analysis; overvoltage self-protection structure; p-base layer; well structure; Avalanche breakdown; Circuits; Fluctuations; HVDC transmission; Numerical analysis; Power electronics; Power system protection; Temperature; Thyristors; Voltage control;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.299684

Filename

299684