The determination of the noise, gain and scattering parameters of microwave transistors (HEMT´s) using only automatic noise figure test-set

Author

Martine, Giovanni ; Sannino, Mario

Author_Institution

Dipartimento di Ingegneria Elettrica, Palermo Univ., Italy

Volume

42

Issue

7

fYear

1994

fDate

7/1/1994 12:00:00 AM

Firstpage

1105

Lastpage

1113

Abstract

A method for the complete characterization of microwave transistors in terms of noise, gain and scattering parameters using only a computer-controlled noise figure measuring set-up is presented. The selection of the optimum measuring conditions, all steps of the experimental procedure, the data collection and the processing needed to derive all the parameters are completely controlled by original (unpublished) software and do not require the presence of an (unskilled) operator. This is novel with respect to other approaches to the same problem. Experimental results regarding the characterization of 32 samples of HEMT´s from four manufacturers in the 8-12 GHz frequency range are reported

Keywords

S-parameters; automatic test equipment; automatic testing; electric noise measurement; gain measurement; high electron mobility transistors; microwave measurement; semiconductor device noise; semiconductor device testing; solid-state microwave devices; 8 to 12 GHz; ATE; HEMT testing; SHF; automatic noise figure test-set; computer-controlled noise figure measuring set-up; gain measurement; microwave transistors; noise measurement; optimum measuring conditions; scattering parameters; Gain measurement; HEMTs; Manufacturing; Microwave measurements; Microwave theory and techniques; Microwave transistors; Noise figure; Noise measurement; Scattering parameters; Software measurement;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.299717

Filename

299717