DocumentCode :
1126937
Title :
Enhancement-Mode Metamorphic HEMT on GaAs Substrate With 2 S/mm 
and 490 GHz 
Author :
Ha, Wonill ; Shinohara, K. ; Brar, B.
Author_Institution :
LLC, Thousand Oaks
Volume :
29
Issue :
5
fYear :
2008
fDate :
5/1/2008 12:00:00 AM
Firstpage :
419
Lastpage :
421
Abstract :
This letter presents the results of an enhancement mode metamorphic high-electron-mobility transistor device on a GaAs substrate with a 70% indium composition channel. A 35-nm gate length device exhibits a 490-GHz current gain cutoff frequency (fT), a transconductance (gm) of 2 S/mm, a threshold voltage (Vth) of 0.11 V (enhancement mode) and a low on- resistance of 0.37 Omega mm. These attributes make the device well- suited for millimeter-wave circuit applications.
Keywords :
gallium arsenide; high electron mobility transistors; millimetre wave circuits; composition channel; frequency 490 GHz; metamorphic HEMT; millimeter-wave circuit; Enhancement-mode transistors; Pt-gate; T-gate; high transconductance; high-electron-mobility transistors (HEMTs); metamorphic; metamorphic HEMTs (mHEMTs);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2008.920283
Filename :
4485010
Link To Document :
