• DocumentCode
    1127056
  • Title

    Electrical method for measuring emitter depth of shallow bipolar transistors

  • Author

    Post, I R C ; Ashburn, P.

  • Author_Institution
    Dept. of Electron. & Comput. Sci., Southampton Univ., UK
  • Volume
    26
  • Issue
    1
  • fYear
    1990
  • Firstpage
    30
  • Lastpage
    31
  • Abstract
    A simple electrical method of measuring the emitter depth of bipolar transistors is presented, and is validated by comparison with SIMS profiles. Good agreement is obtained with the SIMS technique for emitter depths of >1000 AA, but for shallower emitters the electrical method is shown to be more accurate.
  • Keywords
    bipolar transistors; semiconductor device models; semiconductor device testing; spatial variables measurement; 1000 AA; collector current modelling; electrical method; emitter depth measurement; shallow bipolar transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900020
  • Filename
    44856
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1127056