Title :
Ultra-low-reflectivity semiconductor optical amplifiers without antireflection coatings
Author :
Rideout, W. ; Holmstrom, R. ; LaCourse, J. ; Meland, E. ; Powazinik, W.
Author_Institution :
GTE Labs Inc., Waltham, MA, USA
Abstract :
High-performance, GaInAsP/InP tilted stripe ridge waveguide semiconductor optical amplifiers which require no antireflection coating to achieve reflectivities of less than -40 dB are demonstrated. This very low reflectivity is found to be both largely independent of polarisation and wavelength, and also easily reproducible from wafer to wafer.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical waveguides; semiconductor junction lasers; GaInAsP-InP; low reflectivity; semiconductor lasers; semiconductor optical amplifiers; tilted stripe ridge waveguide;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900024
