Title :
Neutron, proton and gamma irradiations of silicon detectors
Author :
Lemeilleur, F. ; Glaser, M. ; Heijne, E.H.M. ; Jarron, P. ; Soave, C. ; Leroy, C. ; Rioux, J. ; Trigger, I.
Author_Institution :
Detector R&D Collaboration RD2, CERN, Geneva, Switzerland
fDate :
6/1/1994 12:00:00 AM
Abstract :
Future high-energy hadron colliders (LHC, SSC) will generate a high flux of hadronic and electromagnetic particles in the experimental areas which has to be sustained by the detectors. The performance and electrical characteristics of silicon detectors evolve with time, during and after irradiations with 1 MeV neutrons up to 1.1×1014 n cm-2, with 24 GeV protons up to 9.5×1013 p cm-2, and with 60Co gammas up to 10 Mrad. Ion-implanted single-diode silicon detectors with an area of 1 cm2 have been used for these studies
Keywords :
gamma-ray effects; neutron effects; proton effects; semiconductor counters; semiconductor diodes; 1 MeV; 10 Mrad; 24 GeV; Si; Si detectors; electrical characteristics; gamma irradiation; ion-implanted single-diode Si detectors; neutron irradiation; performance; proton irradiation; Charge measurement; Current measurement; Gamma ray detection; Gamma ray detectors; Neutrons; Protons; Radiation detectors; Silicon; Thickness measurement; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
