Title :
Spectral linewidth reduction by low spatial hole burning in 1.5 mu m multi-quantum-well lambda 4-shifted DFB lasers
Author :
Uomi, K. ; Sasaki, Seishi ; Tsuchiya, Takao ; Okai, M. ; Aoki, Masaki ; Chinone, N.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
The spectral linewidth of GaInAs/GaInAsP MQW lambda /4-shifted DFB lasers has been reduced by increasing kappa L up to 3-4 without degradation of side-mode suppression by the spatial hole burning effect. A narrow sub-MHz (0.79 MHz) spectral linewidth is achieved for the first time in conventional 300-400 mu m long cavity DFB lasers.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; optical hole burning; semiconductor junction lasers; spectral line breadth; 1.5 micron; 300 to 400 micron; DFB lasers; GaInAs-GaInAsP; III-V semiconductors; cavity length; lambda /4-shifted; linewidth reduction; low spatial hole burning; multi-quantum-well; nonlinear optics; quantum optics; semiconductor lasers; side-mode suppression; spectral linewidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900034
