Title :
Generation and annealing behaviour of MeV proton and 252Cf irradiation induced deep levels in silicon diodes
Author :
Vanhellemont, J. ; Kaniava, A. ; Simoen, E. ; Trauwaert, M.A. ; Claeys, C. ; Johlander, B. ; Harboe-Sorensen, R. ; Adams, L. ; Clauws, P.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
6/1/1994 12:00:00 AM
Abstract :
The generation and annihilation of deep levels in diodes fabricated on nand p-type floating zone and Czochralski silicon substrates is discussed as a function of the substrate parameters and the irradiation and thermal annealing conditions. Both low fluence irradiations with MeV protons and with the fission products of a 252Cf source are investigated. The presence of deep levels with densities in the range of 4×1011 to 2×1012 cm-3, is correlated with increase of the diode leakage current
Keywords :
annealing; deep levels; proton effects; radiation effects; semiconductor diodes; 10 MeV; 100 MeV; 252Cf irradiation; Czochralski; MeV protons; Si; Si diodes; Si substrates; deep level annihilation; deep level generation; diode leakage current; fission product irradiation; floating zone; n-type; p-type; proton irradiation; substrate parameters; thermal annealing; Annealing; Atmosphere; Diodes; Gettering; Particle beams; Protons; Silicon; Space technology; Substrates; Temperature;
Journal_Title :
Nuclear Science, IEEE Transactions on
