Title :
Evidence of negative charge trapping in high temperature annealed thermal oxide
Author :
Paillet, P. ; Herve, D. ; Leray, J.L. ; Devine, R.A.B.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
fDate :
6/1/1994 12:00:00 AM
Abstract :
The effect of high temperature processing of Si/SiO2/Si sandwich structures has been studied on a thermal dry oxide, by considering charge trapping after irradiation. The radiation-induced charge trapping is shown to be very different in annealed and unannealed structures. The latter reveal interfacial trapping behavior, whereas annealed structures exhibit a large trapping of both holes and electrons in the bulk of the oxide, similar to SIMOX oxide behavior
Keywords :
X-ray effects; annealing; electron traps; hole traps; semiconductor-insulator-semiconductor structures; Si-SiO2-Si; Si/SiO2/Si sandwich structures; X ray irradiation; electron trap; high temperature annealing; hole trap; interfacial trapping; negative charge trapping; thermal dry oxide; thermal oxide; unannealed; Annealing; Chemical vapor deposition; Electron traps; Oxidation; Paramagnetic resonance; Plasma applications; Plasma chemistry; Plasma temperature; Sandwich structures; Silicon;
Journal_Title :
Nuclear Science, IEEE Transactions on
