• DocumentCode
    1127334
  • Title

    Evidence of negative charge trapping in high temperature annealed thermal oxide

  • Author

    Paillet, P. ; Herve, D. ; Leray, J.L. ; Devine, R.A.B.

  • Author_Institution
    CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
  • Volume
    41
  • Issue
    3
  • fYear
    1994
  • fDate
    6/1/1994 12:00:00 AM
  • Firstpage
    473
  • Lastpage
    478
  • Abstract
    The effect of high temperature processing of Si/SiO2/Si sandwich structures has been studied on a thermal dry oxide, by considering charge trapping after irradiation. The radiation-induced charge trapping is shown to be very different in annealed and unannealed structures. The latter reveal interfacial trapping behavior, whereas annealed structures exhibit a large trapping of both holes and electrons in the bulk of the oxide, similar to SIMOX oxide behavior
  • Keywords
    X-ray effects; annealing; electron traps; hole traps; semiconductor-insulator-semiconductor structures; Si-SiO2-Si; Si/SiO2/Si sandwich structures; X ray irradiation; electron trap; high temperature annealing; hole trap; interfacial trapping; negative charge trapping; thermal dry oxide; thermal oxide; unannealed; Annealing; Chemical vapor deposition; Electron traps; Oxidation; Paramagnetic resonance; Plasma applications; Plasma chemistry; Plasma temperature; Sandwich structures; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.299787
  • Filename
    299787
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1127334