A study of radiation vulnerability of ferroelectric material and devices

Author

Coïc, Y.M. ; Musseau, O. ; Leray, J.L.

Author_Institution

CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France

Volume

41

Issue

3

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

495

Lastpage

502

Abstract

The radiation effects on ferroelectric material and devices are presented, based on commercially available samples. After recalling the background, effects in ferroelectric PZT capacitors are presented, concerning dose, neutrons and fatigue associated with dose effects. Physical implications and interpretations are sketched. In a second stage, effects are studied at the complete non-volatile RAM device level. Vulnerability in dose, dose rate and neutron fluence of commercial 4 kbit ferroelectric RAM is addressed. 64 kbit results are mentioned in dose rate. These results are compared to previously published data from other manufacturers or laboratories and supplement them. In the appendix, equivalence between rad(Si) and rad(PZT) is discussed in the case of low energy “10 keV Aracor” X-rays and ⁶⁰Co gamma rays

Keywords

X-ray effects; capacitors; ferroelectric devices; ferroelectric materials; gamma-ray effects; lead compounds; neutron effects; piezoelectric materials; random-access storage; 10 keV; 4 kbit; 64 kbit; ⁶⁰Co gamma rays; PZT; PbZrO3TiO3; X-rays; dose rate; fatigue; ferroelectric PZT capacitors; ferroelectric RAM; ferroelectric devices; ferroelectric material; neutron fluence; neutron irradiation; Capacitors; Fatigue; Ferroelectric films; Ferroelectric materials; Laboratories; Manufacturing; Neutrons; Nonvolatile memory; Radiation effects; Random access memory;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.299789

Filename

299789