• DocumentCode
    1127420
  • Title

    Application of test method 1019.4 to nonhardened power MOSFETs

  • Author

    Khosropour, P. ; Galloway, K.F. ; Zupac, D. ; Schrimpf, R.D. ; Calvel, P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Arizona Univ., Tucson, AZ, USA
  • Volume
    41
  • Issue
    3
  • fYear
    1994
  • fDate
    6/1/1994 12:00:00 AM
  • Firstpage
    555
  • Lastpage
    560
  • Abstract
    The applicability of MIL-STD-883D Method 1019.4 to predicting the low-dose-rate radiation response of nonhardened power MOSFETs has been investigated. Method 1019.4 works well in providing bounds for the threshold-voltage shift. However, it is not intended to provide an estimate of the actual ΔVT due to low-dose-rate irradiation. A modified method is proposed which can yield more information on the threshold-voltage shift at low dose rates for power MOSFETs
  • Keywords
    gamma-ray effects; insulated gate field effect transistors; military standards; power transistors; radiation hardening (electronics); semiconductor device testing; MIL-STD-883D Method 1019.4; low-dose-rate radiation response; nonhardened power MOSFET; threshold-voltage shift; Annealing; Application software; Bipolar transistors; Ionizing radiation; MOS devices; MOSFETs; Power engineering and energy; Power engineering computing; Temperature; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.299798
  • Filename
    299798
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1127420