DocumentCode :
1127437
Title :
Low-threshold current AlGaAs/GaAs-distributed feedback laser grown by two-step molecular beam epitaxy
Author :
Kojima, Keisuke ; Noda, Susumu ; Mitsunaga, Kazumasa ; Kyuma, Kazuo ; Nakayama, Takashi
Author_Institution :
Mitsubishi Electric Corporation, Hyogo, Japan
Volume :
4
Issue :
5
fYear :
1986
fDate :
5/1/1986 12:00:00 AM
Firstpage :
507
Lastpage :
512
Abstract :
AlGaAs/GaAs-distributed feedback (DFB) lasers with oxide-stripe structure were fabricated by a two-step molecular beam epitaxial (MBE) growth for the first time. The large coupling coefficient of 90 cm-1and the threshold current as low as 165 mA at room temperature were obtained with the second-order gratings. The characteristic temperature T0 was as high as 210 K. Single longitudinal-mode oscillation was observed up to 
and from 0 to 50°C without any mode hopping. The wavelength variation from device to device was ±5 Å. The dependence of the coupling coefficient on the device structure was calculated, and it was shown that MBE is much more advantageous than LPE to enhance the coupling coefficient.
and from 0 to 50°C without any mode hopping. The wavelength variation from device to device was ±5 Å. The dependence of the coupling coefficient on the device structure was calculated, and it was shown that MBE is much more advantageous than LPE to enhance the coupling coefficient.Keywords :
Distributed feedback (DFB) lasers; Epitaxial growth; Gallium materials/devices; Optical diffraction gratings; Diode lasers; Gallium arsenide; Gratings; Laser feedback; Laser theory; Molecular beam epitaxial growth; Surface emitting lasers; Surface morphology; Temperature; Threshold current;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.1986.1074755
Filename :
1074755
Link To Document :
