Radiation effects on SOI analog devices parameters

Author

Flament, O. ; Leray, J.L. ; Martin, J.-L. ; Montaron, J. ; Raffaelli, M. ; Blanc, J.P. ; Delevoye, E. ; Gautier, J. ; Pelloie, J.L. ; de Poncharra, J. ; Truche, R. ; Delagnes, E. ; Dentan, M. ; Fourches, N.

Author_Institution

CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France

Volume

41

Issue

3

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

565

Lastpage

571

Abstract

Investigations of test circuit parameters in a mixed analog-digital technology (including CMOS, PJFET and NPN) are presented. The changes in electrical parameters as a function of the level of radiation up to 10 Mrad(SiO₂) and 3.8 10¹⁴ neutrons/cm² are reported. Analysis pertains to hardness limiting mechanism identification

Keywords

CMOS integrated circuits; SIMOX; X-ray effects; bipolar integrated circuits; gamma-ray effects; linear integrated circuits; microprocessor chips; mixed analogue-digital integrated circuits; neutron effects; operational amplifiers; radiation hardening (electronics); shift registers; 10 Mrad; 16-bit microprocessor; PJFET-CMOS; PJFET-NPN; SIMOX substrate; SOI analog devices; X-ray irradiation; electrical parameters; gamma irradiation; hardness; mixed analog-digital technology; neutron irradiation; operational amplifiers; shift register; silicon on insulator; CMOS technology; Circuit testing; MOSFETs; Microprocessors; Neutrons; Operational amplifiers; Radiation effects; Radiation hardening; Shift registers; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.299800

Filename

299800