DocumentCode :
1127472
Title :
Effects of γ-rays and neutrons on the noise behaviour of monolithic JFET circuits
Author :
Cesura, G. ; Re, V.
Author_Institution :
Dipartimento di Elettronica, Pavia Univ., Italy
Volume :
41
Issue :
3
fYear :
1994
fDate :
6/1/1994 12:00:00 AM
Firstpage :
577
Lastpage :
582
Abstract :
Two monolithic technologies based upon JFETs were characterised from the point of view of their noise sensitivity to γ and neutron irradiation. Noise measurements on devices and circuits irradiated up to 100 Mrad(Si) absorbed dose of γ-rays and 4·1014 neutrons/cm2 are presented. The experimental results show that the equivalent noise voltage spectrum is largely affected in the frequency region below 1 MHz. A smaller effect is observed in the high frequency region where channel thermal noise is dominant. Accordingly, the equivalent noise charge does not sizeably increase at the short signal processing times, below 100 ns, that are of interest for applications at high luminosity colliders
Keywords :
electric noise measurement; field effect integrated circuits; gamma-ray effects; integrated circuit testing; neutron effects; semiconductor device noise; thermal noise; γ-ray effects; 100 Mrad; channel thermal noise; equivalent noise charge; equivalent noise voltage spectrum; high frequency region; high luminosity colliders; monolithic JFET circuits; neutron effects; noise behaviour; noise sensitivity; short signal processing times; CMOS technology; Circuit noise; Conductivity; Frequency; JFET circuits; Neutrons; Preamplifiers; Signal processing; Substrates; Voltage;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.299802
Filename :
299802
Link To Document :
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