• DocumentCode
    1127479
  • Title

    Burnout sensitivity of power MOSFETs operating in a switching converter

  • Author

    Tastet, P. ; Garnier, Jerome ; Constans, H. ; Tizon, A.H.

  • Author_Institution
    CNES, Toulouse, France
  • Volume
    41
  • Issue
    3
  • fYear
    1994
  • fDate
    6/1/1994 12:00:00 AM
  • Firstpage
    583
  • Lastpage
    588
  • Abstract
    Heavy ion tests of a switching converter using power MOSFETs have allowed us to identify the main parameters which affect the burnout sensitivity of these components. The differences between static and dynamic conditions are clarified in this paper
  • Keywords
    insulated gate field effect transistors; ion beam effects; power convertors; power transistors; sensitivity; switching circuits; burnout sensitivity; dynamic conditions; heavy ion tests; power MOSFET; static conditions; switching converter; Bipolar transistors; Current density; Electric breakdown; Linear particle accelerator; MOSFETs; Oscilloscopes; Protection; Switching converters; System testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.299803
  • Filename
    299803
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1127479