Title :
Characterization of proton interactions in electronic components
Author :
Doucin, B. ; Patin, Y. ; Lochard, J.P. ; Beaucour, J. ; Carriere, T. ; Isabelle, D. ; Buisson, J. ; Corbiere, T. ; Bion, T.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
fDate :
6/1/1994 12:00:00 AM
Abstract :
The responses of several np and pn diodes to 30, 100, 200 MeV protons were experimentally characterized. The results are compared with calculations using the HETC code. Well matching proton-induced SEU cross-sections are deduced
Keywords :
digital simulation; proton effects; semiconductor device models; semiconductor diodes; 100 MeV; 200 MeV; 30 MeV; HETC code; np diodes; pn diodes; proton interactions; proton-induced SEU cross-sections; Atomic measurements; Diodes; Electronic components; Energy loss; Length measurement; Predictive models; Protons; Random access memory; Silicon; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
