Title :
Study of SEUs generated by high energy ions
Author :
Rocher, H. ; Heinrich, Wolfgang ; Harboe-Sorensen, R. ; Adams, Leon
fDate :
6/1/1994 12:00:00 AM
Abstract :
Using 1 GeV/nucleon ions SEUs have been studied in two types of CMOS-SRAMs with respect to tilt angle and tilt direction. Tracks of upset bits, which have been observed under large tilt angles, were used to determine the charge collection depth in these devices
Keywords :
CMOS integrated circuits; SRAM chips; integrated circuit testing; ion beam effects; 1 GeV; CMOS-SRAM; SEUs; charge collection depth; high energy ions; tilt angle; tilt direction; upset bits; Energy measurement; Flip-flops; Ion accelerators; Iron; MOSFETs; Microelectronics; Radiation effects; Semiconductor materials; Single event transient; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
