• DocumentCode
    1127507
  • Title

    Study of SEUs generated by high energy ions

  • Author

    Rocher, H. ; Heinrich, Wolfgang ; Harboe-Sorensen, R. ; Adams, Leon

  • Volume
    41
  • Issue
    3
  • fYear
    1994
  • fDate
    6/1/1994 12:00:00 AM
  • Firstpage
    601
  • Lastpage
    606
  • Abstract
    Using 1 GeV/nucleon ions SEUs have been studied in two types of CMOS-SRAMs with respect to tilt angle and tilt direction. Tracks of upset bits, which have been observed under large tilt angles, were used to determine the charge collection depth in these devices
  • Keywords
    CMOS integrated circuits; SRAM chips; integrated circuit testing; ion beam effects; 1 GeV; CMOS-SRAM; SEUs; charge collection depth; high energy ions; tilt angle; tilt direction; upset bits; Energy measurement; Flip-flops; Ion accelerators; Iron; MOSFETs; Microelectronics; Radiation effects; Semiconductor materials; Single event transient; Testing;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.299806
  • Filename
    299806
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1127507