N-Si/sub x/C/sub 1-x//P-Si diode fabricated using silane, 1,1,1-trichloroethane and arsine at low temperatures

Author

Hébert, François

Author_Institution

AVANTEK Inc., Newark, CA, USA

Volume

12

Issue

9

fYear

1991

Firstpage

477

Lastpage

479

Abstract

A novel method for depositing Si/sub x/C/sub 1-x/ alloys on silicon, based on the silane and 1,1,1-trichloroethane gas system, has been investigated in an inexpensive hot-wall horizontal LPCVD reactor. Temperatures in the range of 650 to 800 degrees C and in situ doping using arsine were used successfully. The film characteristics were evaluated using electron spectroscopy for chemical analysis (ESCA) (XPS), Fourier transform infrared spectroscopy (FTIR), and optical absorption. N/sup +/-P/sup +/ heterojunctions with low reverse leakage current and a forward-bias ideality factor of 1.55 were successfully fabricated.<>

Keywords

X-ray photoelectron spectra; incoherent light annealing; p-n heterojunctions; semiconductor diodes; semiconductor doping; semiconductor growth; semiconductor materials; silicon; silicon compounds; spectrochemical analysis; vapour phase epitaxial growth; 1,1,1-trichloroethane; 650 to 800 degC; AsH/sub 3/; ESCA; Fourier transform infrared spectroscopy; N/sup +/-P/sup +/ heterojunctions; RTA; Si; Si/sub 0.83/C/sub 0.17/ film; Si/sub x/C/sub 1-x/-Si; SiH/sub 4/; XPS; forward-bias ideality factor; hot-wall horizontal LPCVD reactor; in situ doping; low reverse leakage current; optical absorption; Chemical analysis; Doping; Electrons; Fourier transforms; Inductors; Infrared spectra; Optical films; Silicon alloys; Spectroscopy; Temperature distribution;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.116923

Filename

116923