Title :
110-GHz monolithic resonant-tunneling-diode trigger circuit
Author :
Özbay, E. ; Bloom, David M.
Author_Institution :
Edward L. Ginzton Lab., Stanford Univ., CA, USA
Abstract :
The design and fabrication of a novel resonant tunneling diode (RTD) structure to be used in a monolithically integrated trigger circuit are reported. The structure has been designed to have high peak current densities with relatively low resonant voltages. These devices have been monolithically integrated with resistors to build a high-frequency trigger circuit. Experiments demonstrated triggering performance up to 110 GHz with subpicosecond timing jitter.<>
Keywords :
III-V semiconductors; MMIC; aluminium compounds; gallium arsenide; resonant tunnelling devices; trigger circuits; tunnel diodes; 110 GHz; AlAs-GaAs; GaAs; high peak current densities; high-frequency trigger circuit; low resonant voltages; monolithic resonant-tunneling-diode trigger circuit; subpicosecond timing jitter; Current density; Diodes; Fabrication; Frequency; Gallium arsenide; Resistors; Resonance; Resonant tunneling devices; Trigger circuits; Voltage;
Journal_Title :
Electron Device Letters, IEEE
