0.33- mu m gate-length millimeter-wave InP-channel HEMTs with high f/sub 1/ and f/sub max/

Author

Aina, L. ; Burgess, M. ; Mattingly, M. ; O´Connor, James M. ; Meerschaert, A. ; Tong, M. ; Ketterson, A. ; Adesida, Ilesanmi

Author_Institution

Allied-Signal Aerosp. Co., Columbia, MD, USA

Volume

12

Issue

9

fYear

1991

Firstpage

483

Lastpage

485

Abstract

The fabrication of 0.33- mu m gate-length AlInAs/InP high electron mobility transistors (HEMTs) is reported. These InP-channel devices have f/sub t/ values as high as 76 GHz, f/sub max/ values of 146 GHz, and maximum stable gains of 16.8, 14, and 12 dB at 10, 18, and 30 GHz, respectively. The extrinsic DC transconductances are as high as 610 mS/mm; with drain-source breakdown voltages exceeding 10 V. The effective electron velocity in the InP channel is estimated to be at least 1.8*10/sup 7/ cm/s, while the f/sub t/L/sub g/ product is 29 GHz- mu m. These results are comparable to the best reported results for similar InGaAs-channel devices.<>

Keywords

III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; solid-state microwave devices; 0.33 micron; 10 V; 10 to 30 GHz; 12 to 16.8 dB; 146 GHz; 610 mS; 76 GHz; AlInAs-InP; InP-channel devices; MM-wave HEMT; cutoff frequency; drain-source breakdown voltages; effective electron velocity; extrinsic DC transconductances; gate-length; maximum frequency of oscillation; maximum stable gains; Aerospace engineering; Electron mobility; Fabrication; HEMTs; Indium phosphide; MODFETs; Microwave devices; Millimeter wave technology; Millimeter wave transistors; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.116925

Filename

116925