DocumentCode :
1127616
Title :
Impact of Energy Quantization on the Performance of Current-Biased SET Circuits
Author :
Dan, Surya Shankar ; Mahapatra, Santanu
Author_Institution :
Nano-Scale Device Res. Lab., Indian Inst. of Sci., Bangalore, India
Volume :
56
Issue :
8
fYear :
2009
Firstpage :
1562
Lastpage :
1566
Abstract :
The current-biased single electron transistor (SET) (CBS) is an integral part of almost all hybrid CMOS SET circuits. In this paper, for the first time, the effects of energy quantization on the performance of CBS-based circuits are studied through analytical modeling and Monte Carlo simulations. It is demonstrated that energy quantization has no impact on the gain of the CBS characteristics, although it changes the output voltage levels and oscillation periodicity. The effects of energy quantization are further studied for two circuits: negative differential resistance (NDR) and neuron cell, which use the CBS. A new model for the conductance of NDR characteristics is also formulated that includes the energy quantization term.
Keywords :
CMOS integrated circuits; Monte Carlo methods; single electron transistors; transistor circuits; Monte Carlo simulations; analytical modeling; current-biased single electron transistor circuits; energy quantization; hybrid CMOS SET circuits; negative differential resistance; neuron cell; Analytical models; CMOS technology; Circuits; Neurons; Performance analysis; Physics; Quantization; Semiconductor device modeling; Silicon; Single electron transistors; Voltage; Coulomb blockade; Monte Carlo technique; energy quantization; negative differential resistance (NDR); orthodox theory; single electron transistor (SET);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2023954
Filename :
5159397
Link To Document :
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