Title :
A one-dimensional analytical model for the dual-gate-controlled thin-film SOI MOSFET
Author :
Schubert, M. ; Höfflinger, Bernd ; Zingg, R.P.
Author_Institution :
Inst. for Microelectron. Stuttgart, Germany
Abstract :
A one-dimensional analytical model for dual-gate-controlled SOI MOSFETs is presented and applied to a stacked p-channel MOSFET fabricated by epitaxial lateral overgrowth (ELO). The authors found and modeled a nonlinear dependence of front-gate threshold voltage on back-gate voltage if threshold is defined by a constant current instead of a constant silicon-surface potential. It is demonstrated by comparison of subthreshold slopes that surface potentials are not pinned to the onset of strong inversion or accumulation. Accurate one-dimensional modeling is a necessity for device characterization and a precondition for general SOI models for circuit simulation.<>
Keywords :
insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; surface potential; accumulation; back-gate voltage; circuit simulation; dual-gate-controlled SOI MOSFETs; epitaxial lateral overgrowth; front-gate threshold voltage; one-dimensional analytical model; stacked p-channel MOSFET; strong inversion; subthreshold slopes; surface potentials; Analytical models; Circuit simulation; Integrated circuit technology; Large-scale systems; MOSFET circuits; Semiconductor films; Semiconductor process modeling; Silicon; Threshold voltage; Transistors;
Journal_Title :
Electron Device Letters, IEEE
