Title :
Low-temperature CV dispersion in MOS devices
Author :
Viswanathan, C.R. ; Divakaruni, R. ; Kizziar, J.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
A study is reported of the dispersion seen in the accumulation and depletion regions, of the C-V curve in n-channel MOS devices in the temperature range 30-45 K. It is concluded that the dispersion observed in these experiments is caused by time-constant effects, due to the substrate resistance and not caused by dopant atom emission time constant effects. From the measured admittance as a function of temperature and frequency, the acceptor energy level is determined to within +or-0.4 meV.<>
Keywords :
capacitance; impurity electron states; insulated gate field effect transistors; semiconductor device testing; 30 to 45 K; MOST; acceptor energy level; accumulation region; admittance; depletion regions; low temperature C-V dispersion; n-channel MOS devices; substrate resistance; time-constant effects; Atomic measurements; Capacitance; Dielectric substrates; Dispersion; Energy states; Frequency measurement; MOS devices; Temperature dependence; Temperature measurement; Voltage;
Journal_Title :
Electron Device Letters, IEEE
