Title :
Scalable small-signal model for BJT self-heating
Author :
Fox, Robert M. ; Lee, Sang-Gug
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
The effects of self-heating on BJT (bipolar junction transistor) behavior are demonstrated through measurement and simulation. Most affected are the small-signal parameters Y/sub 22/ and Y/sub 12/. A frequency-domain solution to the heat-flow equation is presented. It applies to any rectangular emitter geometry. This model, although simple enough for CAD, predicts thermal spreading impedance with good accuracy for a wide range of frequencies.<>
Keywords :
bipolar transistors; semiconductor device models; BJT; CAD; bipolar junction transistor; frequency-domain solution; heat-flow equation; measurement; rectangular emitter geometry; scalable model; scaling; self heating effects; simulation; small-signal model; small-signal parameters; thermal spreading impedance; wide range of frequencies; Closed-form solution; Equations; Geometry; Impedance; Predictive models; Surface fitting; Temperature; Thermal conductivity; Thermal resistance; Thyristors;
Journal_Title :
Electron Device Letters, IEEE
