Title :
Low temperature-stressed aging test of 1.3-1.45 mu m laser diodes under high power operation
Author :
Kawai, Yusuke ; Yamada, Tomoaki
Author_Institution :
Res. Lab., OKI Electr. Ind. Co. Ltd., Tokyo, Japan
Abstract :
Maximum CW output powers of 380 and 300 mW were obtained from GaInAsP/InP LDs at 1.3 and 1.45 mu m, respectively, at a temperature of -40 degrees C. Temperature-stressed CW aging tests were carried out under high output powers of about 260 mW at 1.3 mu m and 220 mW at 1.45 mu m. The degradation rates of output power were estimated to be less than 3% per 1000 h from the 1600 h aging tests. CW operation has been confirmed under extremely high power operation at low temperature.
Keywords :
III-V semiconductors; ageing; gallium arsenide; gallium compounds; indium compounds; laser transitions; semiconductor device testing; semiconductor junction lasers; -40 degC; 1.3 to 1.45 micron; 220 to 380 mW; CW aging tests; CW output powers; GaInAsP-InP; degradation rates; high power operation; laser diodes; low temperature stressed aging tests; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900035
