DocumentCode
1127713
Title
A new model of switching operation in fully depleted ultrathin-film CMOS/SIMOX
Author
Omura, Yasuhisa ; Izumi, Katsutoshi
Author_Institution
NTT LSI Labs., Atsugi, Japan
Volume
12
Issue
12
fYear
1991
Firstpage
655
Lastpage
657
Abstract
An analysis is made of the switching performances of fabricated ultrathin-film submicrometer-gate CMOS/SIMOX ring oscillators. A time-dependent gate capacitance model is proposed to explain the switching operation mechanism. It is found that reducing the gate capacitance by full depletion of the body silicon dramatically improves the propagation delay time of CMOS/SIMOX.<>
Keywords
CMOS integrated circuits; digital integrated circuits; integrated circuit technology; oscillators; semiconductor device models; semiconductor-insulator boundaries; CMOS/SIMOX; full depletion; fully depleted; gate capacitance reduction; gate propagation delay; propagation delay time; ring oscillators; submicrometer-gate; switching operation mechanism; switching performances; time-dependent gate capacitance model; ultrathin-film; Capacitance; Electron mobility; MOS devices; Performance analysis; Predictive models; Propagation delay; Ring oscillators; Semiconductor device modeling; Silicon; Threshold voltage;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.116945
Filename
116945
Link To Document