Title :
A new model of switching operation in fully depleted ultrathin-film CMOS/SIMOX
Author :
Omura, Yasuhisa ; Izumi, Katsutoshi
Author_Institution :
NTT LSI Labs., Atsugi, Japan
Abstract :
An analysis is made of the switching performances of fabricated ultrathin-film submicrometer-gate CMOS/SIMOX ring oscillators. A time-dependent gate capacitance model is proposed to explain the switching operation mechanism. It is found that reducing the gate capacitance by full depletion of the body silicon dramatically improves the propagation delay time of CMOS/SIMOX.<>
Keywords :
CMOS integrated circuits; digital integrated circuits; integrated circuit technology; oscillators; semiconductor device models; semiconductor-insulator boundaries; CMOS/SIMOX; full depletion; fully depleted; gate capacitance reduction; gate propagation delay; propagation delay time; ring oscillators; submicrometer-gate; switching operation mechanism; switching performances; time-dependent gate capacitance model; ultrathin-film; Capacitance; Electron mobility; MOS devices; Performance analysis; Predictive models; Propagation delay; Ring oscillators; Semiconductor device modeling; Silicon; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
