Title :
Trapping phenomena in avalanche photodiodes on nanosecond scale
Author :
Cova, Sergio ; Lacaita, A. ; Ripamonti, G.
Author_Institution :
Politecnico di Milano, Italy
Abstract :
A technique for measuring the release of minority carriers emitted from deep levels in avalanche photodiodes (APDs) at operating conditions is discussed. The method, time-correlated carrier counting (TCCC), is very sensitive and accurate. Densities of filled traps were measured down to 10/sup 9/ cm/sup -3/ and lifetimes in the nanosecond range. This technique can be useful in tailoring gettering processes for APDs and in studies of traps at high electric fields.<>
Keywords :
avalanche photodiodes; electron device noise; minority carriers; APDs; TCCC; avalanche photodiodes; nanosecond scale; operating conditions; release of minority carriers from deep levels; single carrier sensitivity; time-correlated carrier counting; trap lifetime measurement; Avalanche photodiodes; Charge carrier processes; Density measurement; Detectors; Electron traps; Filling; Fluorescence; Histograms; Pulse measurements; Silicon;
Journal_Title :
Electron Device Letters, IEEE
