• DocumentCode
    1127800
  • Title

    Trapping phenomena in avalanche photodiodes on nanosecond scale

  • Author

    Cova, Sergio ; Lacaita, A. ; Ripamonti, G.

  • Author_Institution
    Politecnico di Milano, Italy
  • Volume
    12
  • Issue
    12
  • fYear
    1991
  • Firstpage
    685
  • Lastpage
    687
  • Abstract
    A technique for measuring the release of minority carriers emitted from deep levels in avalanche photodiodes (APDs) at operating conditions is discussed. The method, time-correlated carrier counting (TCCC), is very sensitive and accurate. Densities of filled traps were measured down to 10/sup 9/ cm/sup -3/ and lifetimes in the nanosecond range. This technique can be useful in tailoring gettering processes for APDs and in studies of traps at high electric fields.<>
  • Keywords
    avalanche photodiodes; electron device noise; minority carriers; APDs; TCCC; avalanche photodiodes; nanosecond scale; operating conditions; release of minority carriers from deep levels; single carrier sensitivity; time-correlated carrier counting; trap lifetime measurement; Avalanche photodiodes; Charge carrier processes; Density measurement; Detectors; Electron traps; Filling; Fluorescence; Histograms; Pulse measurements; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/55.116955
  • Filename
    116955
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1127800