DocumentCode
1127815
Title
A resistive-gate In/sub 0.53/Ga/sub 0.47/As/InP heterostructure CCD
Author
Rossi, D.V. ; Song, J.-I. ; Fossum, Eric R. ; Kirchner, Peter D. ; Pettit, G.D. ; Woodall, Jerry M.
Author_Institution
Dept. of Electr. Eng., Columbia Univ., New York, NY, USA
Volume
12
Issue
12
fYear
1991
Firstpage
688
Lastpage
690
Abstract
The first InGaAs/InP charge-coupled device (CCD) is demonstrated, exhibiting a charge transfer efficiency (CTE) of 0.98 at 13 MHz and 1 GHz. Cooling the device improves the CTE to greater than 0.99 at 13-MHz clock frequency. The 0.76-eV In/sub 0.53/Ga/sub 0.47/As bandgap makes this structure applicable to direct-detection short-wavelength infrared (SWIR) imagers.<>
Keywords
CCD image sensors; III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; infrared imaging; 1 GHz; 13 MHz; 98 to 99 percent; In/sub 0.53/Ga/sub 0.47/As-InP; InP substrate; bandgap; charge transfer efficiency; charge-coupled device; clock frequency; direct detection SWIR imagers; heterostructure CCD; resistive-gate; semiconductors; short-wavelength infrared; Ceramics; Charge coupled devices; Charge transfer; Chromium; Etching; Indium compounds; Indium gallium arsenide; Indium phosphide; Photonic band gap; Schottky barriers;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.116956
Filename
116956
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