Title :
Current-induced light emission from a porous silicon device
Author :
Richter, Axel ; Steiner ; Kozlowski, F. ; Lang, W.
Author_Institution :
Fraunhofer Inst. for Solid State Technol., Munich, Germany
Abstract :
Experiments with light-emitting porous silicon (LEPOS) are described. The porous silicon was made from n-type silicon by anodization in an electrolytic cell by HF with an applied electrical current. Visible light emission was achieved by irradiation with ultraviolet light. Visible electroluminescence (EL) was achieved by applying a DC or AC voltage to a solid-state contact on top of the porous layer. Optical spectra from both experiments are shown.<>
Keywords :
anodised layers; electroluminescence; elemental semiconductors; fluorescence; light emitting devices; luminescence of inorganic solids; silicon; HF acid; LEPOS; UV irradiation; anodization; current induced light emission; electrolytic cell; light emitting porous Si; n-type Si; porous Si surface; visible electroluminescence; visible light emission; Contacts; Electroluminescence; Gold; Hafnium; Optical films; Radiative recombination; Semiconductor films; Silicon devices; Solid state circuits; Stimulated emission;
Journal_Title :
Electron Device Letters, IEEE
