Back-channel hot-electron effect on the front-channel characteristics in thin-film SOI MOSFETs

Author

Zhang, Binglong ; Ma, Tso-Ping

Author_Institution

Yale Univ., New Haven, CT, USA

Volume

12

Issue

12

fYear

1991

Firstpage

699

Lastpage

701

Abstract

The front-channel I-V characteristics in thin-film SOI MOSFETs have been studied before and after back-channel hot-electron stress. As a result of electron trapping in the buried oxide near the drain junction, this stress causes the following changes: (1) a reduction of the channel current for a given gate voltage; (2) the appearance of the kink effect when measured in the reverse mode (with source and drain interchanged); and (3) an increased breakdown voltage when measured in the reverse mode. Both the kink effect and the change in the breakdown behavior can be attributed to the increased barrier height of the drain-body junction resulting from the localized electron trapping in the buried oxide.<>

Keywords

electron traps; hot carriers; insulated gate field effect transistors; semiconductor-insulator boundaries; thin film transistors; SIMOX wafers; Si; Si-SiO/sub 2/; back-channel hot-electron stress; buried oxide; changes; channel current reduction; drain junction; drain-body junction; front-channel I-V characteristics; hot-electron effect; increased barrier height; increased breakdown voltage; kink effect; localized electron trapping; reverse mode; source and drain interchanged; thin-film SOI MOSFETs; threshold voltage increase; Breakdown voltage; Current measurement; Electric breakdown; Electron traps; MOSFETs; Semiconductor films; Stress measurement; Threshold voltage; Transistors; Voltage measurement;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.116960

Filename

116960