DocumentCode
1127857
Title
Precise control of sheet resistance in boron doping of silicon by excimer laser irradiation
Author
Inui, S. ; Nii, T. ; Matsumoto, Satoru
Author_Institution
Dept. of Electr. Eng., Keio Univ., Yokohama, Japan
Volume
12
Issue
12
fYear
1991
Firstpage
702
Lastpage
703
Abstract
To control the sheet resistance in boron doping of silicon by the excimer laser irradiation, two-step doping consisting of the deposition of boron films and the incorporation of dopant atoms is proposed. These processes are carried out in the same chamber successively. Precise control of the sheet resistance can be realized by this method and a very low sheet resistance can also be obtained by only one pulse irradiation for the melting of silicon.<>
Keywords
boron; electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; laser beam applications; semiconductor doping; silicon; Si; Si melting; Si:B; excimer laser irradiation; incorporation of dopant atoms; laser doping; low sheet resistance; semiconductors; sheet resistance control; two-step doping; Atom lasers; Atomic beams; Atomic layer deposition; Boron; Doping; Gas lasers; Optical control; Pulsed laser deposition; Semiconductor films; Silicon;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.116961
Filename
116961
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