Title :
Precise control of sheet resistance in boron doping of silicon by excimer laser irradiation
Author :
Inui, S. ; Nii, T. ; Matsumoto, Satoru
Author_Institution :
Dept. of Electr. Eng., Keio Univ., Yokohama, Japan
Abstract :
To control the sheet resistance in boron doping of silicon by the excimer laser irradiation, two-step doping consisting of the deposition of boron films and the incorporation of dopant atoms is proposed. These processes are carried out in the same chamber successively. Precise control of the sheet resistance can be realized by this method and a very low sheet resistance can also be obtained by only one pulse irradiation for the melting of silicon.<>
Keywords :
boron; electrical conductivity of crystalline semiconductors and insulators; elemental semiconductors; laser beam applications; semiconductor doping; silicon; Si; Si melting; Si:B; excimer laser irradiation; incorporation of dopant atoms; laser doping; low sheet resistance; semiconductors; sheet resistance control; two-step doping; Atom lasers; Atomic beams; Atomic layer deposition; Boron; Doping; Gas lasers; Optical control; Pulsed laser deposition; Semiconductor films; Silicon;
Journal_Title :
Electron Device Letters, IEEE
