Title :
Lattice mobility of holes in strained and unstrained Si/sub 1-x/Ge/sub x/ alloys
Author :
Manku, T. ; Nathan, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
Results of the lattice drift mobility in strained and unstrained SiGe alloys are reported for Ge fractions, 0.0>
Keywords :
Ge-Si alloys; carrier mobility; Ge content; Si/sub 1-x/Ge/sub x/ alloys; acoustic scattering mechanisms; alloy scattering mechanisms; band structure; hole mobility; lattice drift mobility; lattice mobility of holes; optical scattering mechanisms; strain-induced symmetry reduction; strained SiGe alloys; unstrained SiGe alloys; Acoustic scattering; Capacitive sensors; Electron mobility; Germanium alloys; Germanium silicon alloys; Lattices; Optical scattering; Silicon alloys; Silicon germanium; Tensile stress;
Journal_Title :
Electron Device Letters, IEEE
