An InAlAs/InAs MODFET

Author

Eugster, Cristopher C. ; Broekaert, Tom P E ; del Alamo, Jesús A. ; Fonstad, Clifton G.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

12

Issue

12

fYear

1991

Firstpage

707

Lastpage

709

Abstract

An InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides is reported. The heterostructure was grown by MBE on InP and contains a 30-AA InAs channel. A 2- mu m-gate-length device displays well-behaved characteristics, showing sharp pinch-off (V/sub th/=0.8 V) and small output conductance (5 mS/mm) at 300 K. The maximum transconductance is 170 mS mm with a maximum drain current of 312 mA/mm. Strong channel quantization results in a breakdown voltage of -9.6 V, a severalfold improvement over previous InAs MODFETs based on antimonides. Low-temperature magnetic field measurements show strong Shubnikov-de Haas oscillations which, over a certain range of gate voltage, strongly indicate that the electron channel resides in the InAs layer.<>

Keywords

III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; magnetoresistance; molecular beam epitaxial growth; semiconductor epitaxial layers; -9.6 V; 0.8 V; 2 micron; 30 A; 300 K; HEMT; InAlAs-InAs; InAs channel; MBE; MODFET; Shubnikov-de Haas oscillations; breakdown voltage; channel quantization; drain current; electron channel; epitaxial heterostructure; gate voltage; low-temperature magnetic field measurements; modulation-doped field-effect transistor; output conductance; semiconductors; sharp pinch-off; transconductance; well-behaved characteristics; Displays; Epitaxial layers; FETs; HEMTs; Indium compounds; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Quantization; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.116963

Filename

116963