Title :
Roles of electron trapping and interface state generation on gate-induced drain leakage current in p-MOSFETs
Author :
Lo, G.Q. ; Kwong, Dim-Lee
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
The roles of electron trapping and of acceptor-type interface state generation ( Delta D/sub it/) in the off-state gate-induced drain leakage (GIDL) current in p-MOSFETs are studied. It is found that both trapped electrons and negatively charged acceptor-type interface states reduce the GIDL current at the high-surface-field region, in which GIDL is still governed by the band-to-band tunneling process. However, the neutral acceptor-type Delta D/sub it/ increases the GIDL current significantly at the low-surface-field region.<>
Keywords :
electron traps; insulated gate field effect transistors; interface electron states; leakage currents; GIDL; band-to-band tunneling; electron trapping role; gate-induced drain leakage current; high-surface-field region; interface state generation role; low-surface-field region; p-MOSFETs; CMOS technology; Degradation; Electron traps; Interface states; Leakage current; MOSFET circuits; Oxidation; Stress measurement; Threshold voltage; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
