DocumentCode
11279
Title
Extension of Planar Bulk n-Channel MOSFET Scaling With Oxygen Insertion Technology
Author
Nuo Xu ; Takeuchi, H. ; Damrongplasit, Nattapol ; Stephenson, Robert J. ; Xiangyang Huang ; Cody, Nyles W. ; Hytha, Marek ; Mears, Robert J. ; Tsu-Jae King Liu
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Volume
61
Issue
9
fYear
2014
fDate
Sept. 2014
Firstpage
3345
Lastpage
3349
Abstract
An experimental and simulation study of short-channel planar bulk nMOSFET performance enhancement achieved with oxygen insertion technology is presented. The benefits of this technology for low-power digital logic circuits make it a promising evolutionary approach to extend bulk MOSFET scaling.
Keywords
MOSFET; doping profiles; logic circuits; low-power electronics; oxygen; low-power digital logic circuits; oxygen insertion technology; planar bulk n-channel MOSFET scaling; short channel planar bulk nMOSFET performance enhancement; CMOS integrated circuits; Doping; Educational institutions; Logic gates; MOSFET; MOSFET circuits; Silicon; Low-power (LP) logic circuits; mobility enhancement; oxygen insertion (OI); super-steep retrograde well (SSRW); variability;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2342496
Filename
6871327
Link To Document