DocumentCode :
1128012
Title :
Comparison of MONOS Memory Device Integrity When Using 
Trapping Layers With Different N Compositions
Author :
Yang, H.J. ; Cheng, C.F. ; Chen, W.B. ; Lin, S.H. ; Yeh, F.S. ; McAlister, Sean P. ; Chin, Albert
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu
Volume :
55
Issue :
6
fYear :
2008
fDate :
6/1/2008 12:00:00 AM
Firstpage :
1417
Lastpage :
1423
Abstract :
We have studied the nitrogen composition dependence of the characteristics of Hf1-x-yNxOy/SiO2/Si MONOS memory devices. By increasing the N composition in the Hf1-x-yNxOy trapping layer, both the memory window and high-temperature retention improved. The Hf0.3N0.2O0.5 MONOS device displayed good characteristics in terms of its plusmn9-V program/erase (P/E) voltage, 100-mus P/E speed, large initial 2.8-V memory window, and a ten-year extrapolated retention of 1.8 V at 85degC or 1.5 V at 125degC.
Keywords :
hafnium compounds; lanthanum compounds; nitrogen; semiconductor storage; silicon compounds; tantalum compounds; MONOS memory device integrity; TaN-HfLaON-HfNO-SiO2-Si; high-temperature retention; memory window; nitrogen composition; program-erase voltage; temperature 125 degC; temperature 85 degC; time 100 mus; trapping layers; voltage 1.5 V; voltage 1.8 V; voltage 2.8 V; Councils; Electron traps; Energy storage; Hafnium; MONOS devices; Nitrogen; Nonvolatile memory; SONOS devices; Semiconductor device manufacture; Voltage; Erase; high-$kappa$; high- $kappa$ ; nonvolatile memory; program;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2008.920973
Filename :
4487141
Link To Document :
