Title :
Laser-annealed refractory metal silicide films on GaAs
Author :
Anderson, W.T. ; Christou, Alex ; Thompson, P.E. ; Gossett, C.R. ; Eridon, J.M. ; Hatzopoulos, Z. ; Efthimiopoulos, T. ; Kudumas, M. ; Michelakis, C. ; Morgan, D.V.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Abstract :
A new method of depositing refractory metal silicide films was developed for both Schottky barriers and ohmic contacts to GaAs devices. Pulsed excimer laser annealing of the films was used to lower the gate sheet resistances and in the case of ohmic contacts to remove the interface barrier. Rutherford backscattering analysis showed that interdiffusion induced by laser annealing was reduced with In-doped GaAs compared to undoped GaAs substrates.
Keywords :
III-V semiconductors; Schottky effect; excimer lasers; gallium arsenide; indium; laser beam annealing; metallisation; ohmic contacts; semiconductor technology; semiconductor-metal boundaries; GaAs; GaAs substrates; GaAs:In; Rutherford backscattering analysis; Schottky barriers; gate sheet resistances; interdiffusion; interface barrier removal; laser annealing; ohmic contacts; pulsed excimer laser; refractory metal silicide films; silicides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900041
