High efficiency submilliamp vertical cavity lasers with intracavity contacts

Author

Scott, J.W. ; Thibeault, B.J. ; Young, D.B. ; Coldren, L.A. ; Peters, F.H.

Author_Institution

California Univ., Santa Barbara, CA, USA

Volume

6

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

678

Lastpage

680

Abstract

Contacts have been made to p- and n-type layers on opposite sides of the active region within the cavity of an InGaAs vertical cavity surface emitting laser. The two concentric ring contacts allow all electrical connections on and emission from the top surface of a semi-insulating GaAs substrate. The design includes a novel current leveling layer to minimize current crowding effects. A high external quantum efficiency of 46% has been measured with maximum output powers up to 6 mW for a 15 μm diameter device and threshold currents of 0.72 mA for a 7 μm diameter laser.

Keywords

III-V semiconductors; electrical contacts; gallium arsenide; indium compounds; laser cavity resonators; semiconductor lasers; 0.72 mA; 15 micron; 46 percent; 6 mW; 7 micron; GaAs; InGaAs; InGaAs vertical cavity surface emitting laser; concentric ring contacts; current crowding; current leveling layer; electrical connections; external quantum efficiency; intracavity contacts; n-type layers; output powers; p-type layers; semi-insulating GaAs substrate; submilliamp threshold currents; Contacts; Current measurement; Gallium arsenide; Indium gallium arsenide; Power generation; Proximity effect; Ring lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.300160

Filename

300160