Title :
High power single mode operation of AlGaInP visible laser diode with lateral leaky waveguide structure
Author :
Kidoguchi, I. ; Karniyama, S. ; Adachi, H. ; Mannoh, M. ; Ban, Y. ; Ohnaka, K.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fDate :
6/1/1994 12:00:00 AM
Abstract :
AlGaInP visible laser diode with lateral leaky waveguide structure employing 0.025 of negative refractive index step have been fabricated. In comparison to conventional loss guided structure, lateral leaky waveguide structure indicated stable fundamental mode operation. The output power at kink for lateral leaky waveguide laser was around 1.5 times higher than loss guided structure for same stripe widths. The stability was attributed to large mode discrimination against higher order mode. The lateral leaky waveguide laser with 560 μm cavity length employing the antireflection (5%)/high reflection (82%) showed 66 mW of output power with no kinks at 25/spl deg/C.
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; laser modes; optical waveguides; refractive index; semiconductor lasers; 25 degC; 500 mum; 66 mW; AlGaInP; AlGaInP visible laser diode; antireflection; cavity length; high power single mode operation; high reflection; kinks; lateral leaky waveguide structure; mode discrimination; negative refractive index step; output power; stable fundamental mode operation; Absorption; Diode lasers; Laser modes; Optical refraction; Optical waveguides; Power generation; Power lasers; Propagation losses; Refractive index; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
