Enhanced relaxation oscillation frequency of 1.3 μm strained-layer multiquantum well lasers

Author

Kito, M. ; Otsuka, N. ; Ishino, M. ; Fujihara, K. ; Matsui, Y.

Author_Institution

Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

Volume

6

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

690

Lastpage

693

Abstract

Dependence of relaxation oscillation frequency (f/sub r/) on the bandgap wavelength of InGaAsP barrier layers (/spl lambda//sub g//sup b/) and number of quantum wells (N/sub w/) were investigated for the first time, for 1.3 μm InGaAsP/InGaAsP compressively strained multiquantum well (MQW) lasers. 1.3 times higher f/sub r/ was confirmed for strained-layer MQW lasers with large N/sub w/ (N/sub w//spl ges/7) and wide bandgap barrier layers (/spl lambda//sub g//sup b/=1.05 μm) at the same injection level, compared with unstrained MQW lasers having the same well thicknesses and the same emitting wavelength. This enhancement mainly results from increased differential gain due to strain effects separated from the quantum-size effect.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; internal stresses; laser transitions; semiconductor lasers; 1.3 mum; InGaAs; InGaAsP barrier layers; InGaAsP/InGaAsP compressively strained multiquantum well lasers; bandgap wavelength; differential gain; emitting wavelength; injection level; quantum wells; quantum-size effect; relaxation oscillation frequency; strain effects; strained-layer MQW lasers; strained-layer multiquantum well lasers; well thicknesses; wide bandgap barrier layers; Capacitive sensors; Fiber lasers; Frequency; Laser noise; Photonic band gap; Power generation; Power lasers; Quantum well devices; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.300164

Filename

300164