Title :
Enhanced relaxation oscillation frequency of 1.3 μm strained-layer multiquantum well lasers
Author :
Kito, M. ; Otsuka, N. ; Ishino, M. ; Fujihara, K. ; Matsui, Y.
Author_Institution :
Semicond. Res. Center, Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fDate :
6/1/1994 12:00:00 AM
Abstract :
Dependence of relaxation oscillation frequency (f/sub r/) on the bandgap wavelength of InGaAsP barrier layers (/spl lambda//sub g//sup b/) and number of quantum wells (N/sub w/) were investigated for the first time, for 1.3 μm InGaAsP/InGaAsP compressively strained multiquantum well (MQW) lasers. 1.3 times higher f/sub r/ was confirmed for strained-layer MQW lasers with large N/sub w/ (N/sub w//spl ges/7) and wide bandgap barrier layers (/spl lambda//sub g//sup b/=1.05 μm) at the same injection level, compared with unstrained MQW lasers having the same well thicknesses and the same emitting wavelength. This enhancement mainly results from increased differential gain due to strain effects separated from the quantum-size effect.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; internal stresses; laser transitions; semiconductor lasers; 1.3 mum; InGaAs; InGaAsP barrier layers; InGaAsP/InGaAsP compressively strained multiquantum well lasers; bandgap wavelength; differential gain; emitting wavelength; injection level; quantum wells; quantum-size effect; relaxation oscillation frequency; strain effects; strained-layer MQW lasers; strained-layer multiquantum well lasers; well thicknesses; wide bandgap barrier layers; Capacitive sensors; Fiber lasers; Frequency; Laser noise; Photonic band gap; Power generation; Power lasers; Quantum well devices; Quantum well lasers; Semiconductor lasers;
Journal_Title :
Photonics Technology Letters, IEEE
