Title :
Fluidic self-assembly for the integration of GaAs light-emitting diodes on Si substrates
Author :
Yeh, Hsi-Jen J. ; Smith, John S.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
6/1/1994 12:00:00 AM
Abstract :
The integration of GaAs optoelectronic devices on Si VLSI is important for many high-bandwidth communication applications. In this paper we describe a novel technique for the quasi-monolithic integration of GaAs light-emitting diodes on Si substrates that utilizes fluid transport and shape differentiation for placement and orientation. GaAs light-emitting diodes fabricated into trapezoidal blocks are suspended in a carrier fluid and deposited over holes etched in Si for integration. Top-side ring contact and bottom electrical contact are fabricated on the blocks prior to integration.<>
Keywords :
III-V semiconductors; VLSI; gallium arsenide; integrated optoelectronics; light emitting diodes; optical communication equipment; optical workshop techniques; GaAs; GaAs light-emitting diodes; GaAs optoelectronic devices; LED; Si; Si VLSI; Si substrates; bottom electrical contact; carrier fluid; etched; fluid transport; fluidic self-assembly; high-bandwidth communication applications; integration; orientation; placement; quasi-monolithic integration; shape differentiation; top-side ring contact; trapezoidal blocks; Anisotropic magnetoresistance; Gallium arsenide; Light emitting diodes; Optoelectronic devices; Self-assembly; Shape; Sputter etching; Substrates; Very large scale integration; Wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
