Optoelectronic exclusive-NOR gate operating at 200 mbit/s

Author

She, T.C. ; Shu, C.

Author_Institution

Dept. of Electron. Eng., Chinese Univ. of Hong Kong, Shatin, Hong Kong

Volume

6

Issue

6

fYear

1994

fDate

6/1/1994 12:00:00 AM

Firstpage

712

Lastpage

714

Abstract

An optoelectronic exclusive-NOR gate was demonstrated for the first time. The device consisted of a composite pair of GaAs metal-semiconductor-metal photodetectors. Special input pulse trains were constructed from a 0.83 μm laser diode to test its functionality. Output electrical signal shorter than 800 ps was achieved. On-off contrast ratio of 6.2 dB was obtained with an incident pulse energy below 100 fJ. The device is useful in bit pattern matching for optical signal processing and optical computing.

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; metal-semiconductor-metal structures; optical logic; photodetectors; 0.83 micron; 100 fJ; 200 Mbit/s; 800 ps; GaAs; GaAs metal-semiconductor-metal photodetectors; bit pattern matching; laser diode; on-off contrast ratio; optical computing; optical signal processing; optoelectronic exclusive-NOR gate; pulse trains; Circuits; Diode lasers; Gallium arsenide; High speed optical techniques; Logic functions; Optical devices; Optical pulses; Optical signal processing; Photodetectors; Phototransistors;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.300171

Filename

300171