DocumentCode :
1128515
Title :
The 
Noise and Random Telegraph Noise Characteristics in Floating-Gate nand Flash Memories
Author :
Bae, Sung-Ho ; Lee, Jeong-Hyun ; Kwon, Hyuck-In ; Ahn, Jung-Ryul ; Om, Jae-Chul ; Park, Chan Hyeong ; Lee, Jong-Ho
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Kyungpook Nat. Univ., Daegu, South Korea
Volume :
56
Issue :
8
fYear :
2009
Firstpage :
1624
Lastpage :
1630
Abstract :
We have characterized low-frequency noise (LFN) such as 1/f noise and random telegraph noise (RTN) in a NAND flash memory cell string for the first time and shown its fundamental properties. The NAND flash memory cells showed specific LFN characteristics under various conditions such as bit-line bias, word-line bias of a selected cell, and pass bias of the unselected cells in the NAND string. Also, LFN was investigated with the program/erase (P/E) cycling of a cell or all cells in a string, and maximum threshold voltage fluctuation of several tens of millivolts after ~100 000 cycles at the 70-nm technology node was shown. Finally, we predicted the effects of LFN in sub-70-nm NAND flash memories.
Keywords :
1/f noise; NAND circuits; flash memories; nanotechnology; 1/f noise; NAND string; floating-gate NAND flash memories; low frequency noise; nanotechnology node; program/erase cycling; random telegraph noise; size 70 nm; voltage fluctuation; 1f noise; FETs; Flash memory; Low-frequency noise; MOSFETs; Nonvolatile memory; Semiconductor device noise; Telegraphy; Threshold voltage; Voltage fluctuations; $hbox{1}/f$
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2022700
Filename :
5159497
Link To Document :
