Title :
Motion of free conducting particles in SF6 insulated systems under dc switching voltages
Author :
Radwan, R.M. ; Morsi, R. ; Abd-Allah, M.A.
Author_Institution :
Dept. of Electr. Eng., Cairo Univ., Giza, Egypt
fDate :
2/1/1994 12:00:00 AM
Abstract :
The dynamic behavior of free conducting particles in SF6 insulated systems under switching impulse (SI) superimposed on a dc voltage is investigated. This study includes the influence of the most important design parameters on the particle motion, such as value of dc/switching voltage ratio, particle parameters, shape of switching voltage and system configuration; parallel plane and coaxial cylinders. The computations have concluded that the behavior of contaminating conducting particles in GIS when subjected to a dc bias voltage and SI wave is more dangerous than its behavior under pure switching impulse voltage
Keywords :
gaseous insulation; sulphur compounds; GIS; SF6; SF6 insulated systems; coaxial cylinders; contaminating conducting particles; dc bias voltage; dc switching voltages; dynamic behavior; free conducting particles; parallel plane; particle motion; particle parameters; pure switching impulse voltage; switching voltage; system configuration; Contamination; Dielectrics and electrical insulation; Equations; Geographic Information Systems; Helium; Shape; Stress; Switching circuits; Tail; Voltage;
Journal_Title :
Dielectrics and Electrical Insulation, IEEE Transactions on
