DocumentCode :
1128771
Title :
Stimulated emission from Ga1-x Alx As diodes at 77°K
Author :
Rupprecht, H. ; Woodall, J. ; Pettit, G. ; Crowe, J. ; Quinn, Heather
Author_Institution :
IBM Watson Research Center, Yorktown Heights, NY, USA
Volume :
4
Issue :
1
fYear :
1968
fDate :
1/1/1968 12:00:00 AM
Firstpage :
35
Lastpage :
35
Abstract :
Ga1-x Alx As was found to be a suitable material for semiconductor lasers. Stimulated emission from Fabry-Perot type of diodes has been observed at 77°K and 273°K. The highest peak energy of the laser line at 77°K so far is 1.65 eV ( 
Å). The Ga1-x Alx As material was obtained by a liquid phase epitaxial method, described in a previous paper.
Å). The GaKeywords :
Bandwidth; Electrooptic modulators; Fabry-Perot; Frequency synchronization; Optical materials; Optical modulation; Semiconductor diodes; Semiconductor materials; Stimulated emission; Threshold current;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1968.1074909
Filename :
1074909
Link To Document :
