DocumentCode
1128802
Title
Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With
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 in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with Al<sub>2</sub>O<sub>3</sub> and Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> gate dielectrics. The LFN is proportional to 1/f<sup>gamma</sup>, with gamma ~ 1 for both devices, but the normalized noise for the Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> device is two to three orders of magnitude lower than that for the Al<sub>2</sub>O<sub>3</sub> device. The mobility fluctuation is the dominant LFN mechanism in both devices, but the noise from the source/drain contacts becomes comparable to the intrinsic channel noise as the gate overdrive voltage increases in Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> devices. The SiN<sub>x</sub> interfacial layer is considered to be very effective in reducing LFN by suppressing the remote phonon scattering from the Al<sub>2</sub>O<sub>3</sub> dielectric. Hooge´s parameter is extracted to ~6.0 times 10<sup>-3</sup> in Al<sub>2</sub>O<sub>3</sub>/SiN<sub>x</sub> devices.</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>aluminium compounds; amorphous state; electrical contacts; phonon spectra; semiconductor device noise; silicon compounds; thin film transistors; Al<sub>2</sub>O<sub>3</sub>-SiN<sub>x</sub>; Hooge´s parameter; a-IGZO thin-film transistors; amorphous indium-gallium-zinc oxide; gate dielectrics; gate overdrive voltage; interfacial layer; intrinsic channel noise; low-frequency-noise behaviors; mobility fluctuation; normalized noise; phonon scattering; source-drain contacts; Amorphous indium–gallium–zinc oxide (a-IGZO); gate dielectrics; low-frequency noise (LFN); mobility fluctuation; remote phonon scattering; thin-film transistors (TFTs);</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fLanguage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>English</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Journal_Title</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Electron Device Letters, IEEE</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Publisher</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>ieee</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>ISSN</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>0741-3106</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Type</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>jour</h2></div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>DOI</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>10.1109/LED.2009.2023543</div></div>
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<div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Filename</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>5159529</div></div>
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