DocumentCode :
1128807
Title :
Measurements of the electrooptic effect in CdS, ZnTe, and GaAs at 10.6 microns
Author :
Kaminow, Ivan P.
Author_Institution :
Bell Telephone Laboratories, Inc., Holmdel, NJ, USA
Volume :
4
Issue :
1
fYear :
1968
fDate :
1/1/1968 12:00:00 AM
Firstpage :
23
Lastpage :
26
Abstract :
Low-frequency electrooptic coefficients have been measured for three semiconductors at 10.5 microns. The results are 
m/V for CdS, 
m/V for ZnTe, and 
m/V for GaAs. A comparison is made of the efficiencies of these materials in different modulator configurations. The effect of photoelectrically induced space charge is discussed briefly.
m/V for CdS, m/V for ZnTe, and m/V for GaAs. A comparison is made of the efficiencies of these materials in different modulator configurations. The effect of photoelectrically induced space charge is discussed briefly.Keywords :
Circuits; Crystalline materials; Electrooptic effects; Electrooptic modulators; Gallium arsenide; Optical materials; Optical modulation; Voltage; Wavelength measurement; Zinc compounds;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1968.1074913
Filename :
1074913
Link To Document :
