Nonvolatile-Memory Characteristics of $\hbox {AlO}^{-}$ -Implanted $\hbox {Al}_{2}\hbox {O}_{3}$

The nonvolatile-memory (NVM) characteristics of AlO^- -implanted Al₂O₃ structures are reported and shown to exhibit promising behaviors, including fast program/erase speeds and high-temperature data retention. Photoconductivity spectra show the existence of two dominant trap levels, located at around 2 and 4 eV below the conduction band minimum of Al₂O₃, and our calculations show that these levels are likely attributed to the defects in the Al₂O₃, such as the Al-O divacancy. The relative concentrations of these defects vary with the implant fluence and are shown to explain the NVM characteristics of the samples irradiated to different fluences.