DocumentCode :
1129057
Title :
Nonlinear optical coefficients in group IV and III-V semiconductors
Author :
Jha, S.S. ; Bloembergen, N.
Author_Institution :
Harvard Univ., Cambridge, MA, USA
Volume :
4
Issue :
10
fYear :
1968
fDate :
10/1/1968 12:00:00 AM
Firstpage :
670
Lastpage :
673
Abstract :
In the low-frequency approximation, the magnitude of optical nonlinearities can be calculated exactly for conduction electrons from known band structure near 
, and approximately for the valence electrons on the basis of simple tetrahedral bonding orbitals. Reasonable agreement with experimental data has been obtained, both for second harmonic generation and for third order susceptibilities in Group IV and III-V semiconductors.
, and approximately for the valence electrons on the basis of simple tetrahedral bonding orbitals. Reasonable agreement with experimental data has been obtained, both for second harmonic generation and for third order susceptibilities in Group IV and III-V semiconductors.Keywords :
Current density; Electron optics; Frequency; III-V semiconductor materials; Nonlinear optics; Optical harmonic generation; Photonic band gap; Polarization; Resonance; Wave functions;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/JQE.1968.1074942
Filename :
1074942
Link To Document :
