DocumentCode
1129057
Title
Nonlinear optical coefficients in group IV and III-V semiconductors
Author
Jha, S.S. ; Bloembergen, N.
Author_Institution
Harvard Univ., Cambridge, MA, USA
Volume
4
Issue
10
fYear
1968
fDate
10/1/1968 12:00:00 AM
Firstpage
670
Lastpage
673
Abstract
In the low-frequency approximation, the magnitude of optical nonlinearities can be calculated exactly for conduction electrons from known band structure near 
, and approximately for the valence electrons on the basis of simple tetrahedral bonding orbitals. Reasonable agreement with experimental data has been obtained, both for second harmonic generation and for third order susceptibilities in Group IV and III-V semiconductors.
, and approximately for the valence electrons on the basis of simple tetrahedral bonding orbitals. Reasonable agreement with experimental data has been obtained, both for second harmonic generation and for third order susceptibilities in Group IV and III-V semiconductors.Keywords
Current density; Electron optics; Frequency; III-V semiconductor materials; Nonlinear optics; Optical harmonic generation; Photonic band gap; Polarization; Resonance; Wave functions;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.1968.1074942
Filename
1074942
Link To Document