Two-dimensional temperature modelling of DH laser diodes using the transmission-line modelling (TLM) method

Author

Ait-Sadi, R. ; Lowery, A.J. ; Tuck, B.

Author_Institution

Vector Fields Ltd., Oxford, UK

Volume

141

Issue

1

fYear

1994

Firstpage

7

Lastpage

14

Abstract

The two-dimensional temperature distribution in a DH GaAs/GaAlAs laser diode under continuous operation is analysed. The dynamic thermal diffusion equation is solved using the transmission-line modelling (TLM) method. The heating mechanisms included in the model are nonradiative recombination in the active region, partial reabsorption of generated radiation in the active region, absorption of stimulated emission in the cladding regions, absorption of spontaneous radiation transferred to the capping and substrate layers, Joule heating of the substrate and scattering loss at the heterojunction interfaces.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heat radiation; numerical analysis; semiconductor device models; semiconductor lasers; temperature distribution; transmission line theory; DH laser diodes; GaAs-GaAlAs; GaAs/GaAlAs laser diode; Joule heating; active region; cladding regions; continuous operation; dynamic thermal diffusion; heating mechanisms; heterojunction interfaces; nonradiative recombination; partial reabsorption; scattering loss; spontaneous radiation; stimulated emission; substrate; temperature modelling; transmission-line modelling; two-dimensional temperature distribution; Aluminum compounds; Gallium compounds; Numerical analysis; Semiconductor device modeling; Semiconductor lasers; Temperature; Transmission line theory;

fLanguage

English

Journal_Title

Science, Measurement and Technology, IEE Proceedings

Publisher

iet

ISSN

1350-2344

Type

jour

DOI

10.1049/ip-smt:19949585

Filename

300334